Inhomogeneity of liquid-phase-epitaxial InGaAsP lattice matched on InP: Effects of transient growth
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- P. E. Brunemeier
- Electrical Engineering Research Laboratory and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
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- T. J. Roth
- Electrical Engineering Research Laboratory and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
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- N. Holonyak
- Electrical Engineering Research Laboratory and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
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- G. E. Stillman
- Electrical Engineering Research Laboratory and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
説明
<jats:p>Band-gap and lattice constant data are presented characterizing the transient composition that occurs at the onset of liquid-phase-epitaxial growth of InGaAsP on InP substrates. This compositional inhomogeneity, a region of significantly different band gap and lattice constant than that of the remainder of the layer, is a result of the extreme nonequilibrium conditions that exist in the first milliseconds of growth. The consequences of a thin, strained, and band-gap-graded layer within a practical device are considered, and a method of producing crystals free of this basic inhomogeneity is demonstrated. The data permit a calculation of the changes in solidus atomic fraction of each atomic species present in the diffusion-limited growth, clarifying some aspects of incorporation kinetic effects. A mechanism for the transient growth is considered, based on new data and data of previous work.</jats:p>
収録刊行物
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- Journal of Applied Physics
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Journal of Applied Physics 56 (6), 1707-1716, 1984-09-15
AIP Publishing
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詳細情報 詳細情報について
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- CRID
- 1360016869466885120
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- DOI
- 10.1063/1.334161
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- ISSN
- 10897550
- 00218979
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- データソース種別
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- Crossref