Improvement of GaAs-GaAlAs double-heterostructure laser wafer by Ga1−<i>x</i>Al<i>x</i>As buffer layer

DOI PDF 被引用文献1件
  • K. Shima
    Fujitsu Labs., 1015 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan
  • M. Morimoto
    Fujitsu Labs., 1015 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan
  • H. Imai
    Fujitsu Labs., 1015 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan
  • T. Fujiwara
    Fujitsu Labs., 1015 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan
  • M. Takusagawa
    Fujitsu Labs., 1015 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan

書誌事項

公開日
1980-09-15
DOI
  • 10.1063/1.91990
公開者
AIP Publishing

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<jats:p>The optically induced degradation in GaAs-GaAlAs double-heterostructure (DH) laser wafers is examined at elevated temperatures. The degradation of the photoluminescence properties by optical pumping is considered to originate at the interface between an n-GaAlAs clad layer and a p-GaAs active layer, as it is greatly reduced by the insertion of a thin Ga1−xAlxAs buffer layer (x∼0.05, ∼0.05 μm thick) between these two layers. The degradation rate during optical pumping is correlated to laser life. The lasers fabricated from the DH wafers with the Ga1−xAlxAs buffer layer are still operating after 2000 h at 70 °C, whereas lasers without the buffer layer are inoperative after a few hundred hours.</jats:p>

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