Direct observation of electron leakage in InGaAsP/InP double heterostructure

DOI PDF 被引用文献2件
  • S. Yamakoshi
    Fujitsu Laboratories Ltd., 1015, Kamikodanaka, Nakahara, Kawasaki 211, Japan
  • T. Sanada
    Fujitsu Laboratories Ltd., 1015, Kamikodanaka, Nakahara, Kawasaki 211, Japan
  • O. Wada
    Fujitsu Laboratories Ltd., 1015, Kamikodanaka, Nakahara, Kawasaki 211, Japan
  • I. Umebu
    Fujitsu Laboratories Ltd., 1015, Kamikodanaka, Nakahara, Kawasaki 211, Japan
  • T. Sakurai
    Fujitsu Laboratories Ltd., 1015, Kamikodanaka, Nakahara, Kawasaki 211, Japan

書誌事項

公開日
1982-01-15
DOI
  • 10.1063/1.93017
公開者
AIP Publishing

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説明

<jats:p>The electron leakage through the heterobarrier consisting of a thin InGaAsP active layer and a p-InP confining layer was directly observed by using a novel InGaAsP/InP light-emitting diode (LED) structure. In the present structure, electrons leaking from the active layer were confined in a subsidiary quaternary layer having a crystal composition different from that of the active layer, and the recombination emission caused by these electrons was optically detected. Experimental results showed that significant electron leakage can occur in the present InGaAsP/InP double heterostructure (DH) system, suggesting a possibility of the electron leakage being one of the dominant mechanisms of sublinearity in the light intensity-current characteristics in InGaAsP/InP DH LED’s operating at wavelengths shorter than 1.3 μm and also of the temperature dependence of threshold current in laser diodes.</jats:p>

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