Thermal degradation of homoepitaxial GaAs interfaces

W. Y. Lum, H. H. Wieder, W. H. Koschel, S. G. Bishop, B. D. McCombe

doi:10.1063/1.89215

Thermal degradation of homoepitaxial GaAs interfaces

DOI PDF 被引用文献2件

W. Y. Lum

Naval Electronics Laboratory Center, San Diego, California 92152
H. H. Wieder

Naval Electronics Laboratory Center, San Diego, California 92152
W. H. Koschel

Naval Research Laboratory, Washington, D.C. 20375
S. G. Bishop

Naval Research Laboratory, Washington, D.C. 20375
B. D. McCombe

Naval Research Laboratory, Washington, D.C. 20375

書誌事項

公開日: 1977-01-01

DOI

10.1063/1.89215

公開者: AIP Publishing

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説明

<jats:p>Photoluminescence techniques have been used to detect and characterize p-type conducting layers formed on the surface of semi-insulating GaAs substrates and at the liquid phase epitaxial layer–GaAs substrate interface during pregrowth heat treatment. These layers contain ∼1017 cm−3 shallow acceptors and a high density of arsenic vacancy complexes, and can be eliminated by pregrowth Ga etching of the substrate.</jats:p>