A dry-etched inorganic resist

DOI PDF 被引用文献2件
  • M. S. Chang
    University of Pennsylvania, Moore School of Electrical Engineering, Philadelphia, Pennsylvania 19104
  • J. T. Chen
    University of Pennsylvania, Moore School of Electrical Engineering, Philadelphia, Pennsylvania 19104

書誌事項

公開日
1978-11-15
DOI
  • 10.1063/1.90206
公開者
AIP Publishing

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説明

<jats:p>An as-deposited As2S3 thin film is employed as a negative working inorganic resist in lithographic applications. A CF4 plasma is used to etch differentially for pattern delineation. A maximum etch rate ratio of 1.8 between the unexposed and exposed films is obtained. Ag-photodoped As2S3 is found to have a much slower etch rate in the CF4 plasma. Grating patterns have been obtained using this dry process. The extension of this concept to conventional organic polymer resists is considered.</jats:p>

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