Zn-diffused In0.53Ga0.47As/InP avalanche photodetector

DOI PDF 被引用文献6件
  • Yuichi Matsushima
    KDD Research and Development Laboratories, Nakameguro, Meguro-ku, Tokyo 153, Japan
  • Kazuo Sakai
    KDD Research and Development Laboratories, Nakameguro, Meguro-ku, Tokyo 153, Japan
  • Shigeyuki Akiba
    KDD Research and Development Laboratories, Nakameguro, Meguro-ku, Tokyo 153, Japan
  • Takaya Yamamoto
    KDD Research and Development Laboratories, Nakameguro, Meguro-ku, Tokyo 153, Japan

書誌事項

公開日
1979-09-15
DOI
  • 10.1063/1.91171
公開者
AIP Publishing

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説明

<jats:p>Mesa In0.53Ga0.47As avalanche photodetectors were successfully fabricated by liquid-phase-epitaxial growth on (100) -InP substrate and Zn-diffusion technique. An avalanche multiplication M as high as 32 was measured under broad-area illumination provided by a cw InGaAsP laser at 1.3 μm. Distribution of M was measured by an electron-beam-induced current image of a scanning electron microscope, and uniform multiplication profiles were observed up to M=3 and M=12 at the mesa diameter of 300 and 150 μm, respectively.</jats:p>

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