Measurement of the conduction-band discontinuity of molecular beam epitaxial grown In0.52Al0.48As/In0.53Ga0.47As, <i>N</i>-<i>n</i> heterojunction by <i>C</i>-<i>V</i> profiling

DOI PDF 被引用文献8件
  • R. People
    Bell Laboratories, Murray Hill, New Jersey 07974
  • K. W. Wecht
    Bell Laboratories, Murray Hill, New Jersey 07974
  • K. Alavi
    Bell Laboratories, Murray Hill, New Jersey 07974
  • A. Y. Cho
    Bell Laboratories, Murray Hill, New Jersey 07974

書誌事項

公開日
1983-07-01
DOI
  • 10.1063/1.94149
公開者
AIP Publishing

この論文をさがす

説明

<jats:p>We report the first measurement of the conduction-band discontinuity ΔEc for molecular beam epitaxial grown N-n In0.52Al0.48As/In0.53Ga0.47As heterojunction using the C-V profiling technique outlined by Kroemer et al. We find ΔEc=(0.50±0.05) eV @297 K corresponding to (71±7)% ΔEg. An interface charge density σi of (4.0±0.8)×1011 cm−2 was also obtained. A knowledge of ΔEc is of importance for quantifying carrier confinement in double heterostructure lasers fabricated from these ternary compounds.</jats:p>

収録刊行物

被引用文献 (8)*注記

もっと見る

詳細情報 詳細情報について

問題の指摘

ページトップへ