Pure dephasing induced by exciton–phonon interactions in narrow GaAs quantum wells
書誌事項
- 公開日
- 1998-11
- 権利情報
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- https://www.elsevier.com/tdm/userlicense/1.0/
- DOI
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- 10.1016/s0038-1098(98)00461-x
- 公開者
- Elsevier BV
この論文をさがす
説明
Abstract We investigate both dephasing and population relaxation of excitons localized in quantum dot like islands in narrow GaAs quantum wells by using stimulated photon echoes. A direct comparison of these two closely related decay processes reveals a pure dephasing contribution that dominates excitonic dephasing at elevated temperatures but does not involve exciton population relaxation. The pure dephasing contribution arises from coupling of excitonic states with a continuum of acoustic phonons and is enhanced by 3D quantum confinement. Both the magnitude and the temperature dependence of the pure dephasing rate can be described by a theoretical model that generalizes the Huang–Rhys theory of F-centers.
収録刊行物
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- Solid State Communications
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Solid State Communications 108 (11), 857-861, 1998-11
Elsevier BV