Investigation of the Chemical Reaction between Silver Electrodes and Transparent Conductive Oxide Films for the Improvement of Fill Factor of Silicon Heterojunction Solar Cells

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Abstract

<jats:p>We evaluated the fill factor (FF) degradation mechanism in silicon heterojunction (SHJ) solar cells with high mobility In<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> film as a high carrier mobility transparent conductive oxide (TCO) film. In particular, we focused on the electrode formation using a high productive screen-printing technique. We found the In<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> film is easier to be reduced than the traditional TCO such as tin-doped indium oxide (ITO). Thus, the Ag atom inside the electrode is easily oxidized during the cure annealing process and results in higher contact resistance at electrode/TCO interface and deteriorate FF characteristic. We introduced novel cation catalyst additive for paste polymerization which is less reactive with In<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> and improve the contact resistance by suppressing the silver oxidation. We also demonstrated SHJ cell fabrication and prove the effect of the developed silver paste.</jats:p>

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