Electron states associated with the core region of the 60° dislocation in silicon and germanium

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<jats:title>Abstract</jats:title><jats:p>Using the tight‐binding method the localized states connected with the 60° dislocation in silicon and germanium are calculated. Periodic arrays of large unit cells each containing two 60° dislocations with Burgers vectors of opposite sign are considered. As a consequence of the broken bonds a one‐dimensional band occurs in the direction of the dislocation line for both silicon and germanium. The dilatation region of the dislocation core is also found to cause a second dislocation band to appear below the conduction band edge.</jats:p>

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