Composition profile of an AlGaAs epilayer on a V-grooved substrate grown by low-pressure metalorganic vapor phase epitaxy

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  • Wugen Pan
    Department of Applied Physics, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113, Japan
  • Hiroyuki Yaguchi
    Department of Applied Physics, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113, Japan
  • Kentaro Onabe
    Department of Applied Physics, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113, Japan
  • Ryoichi Ito
    Department of Applied Physics, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113, Japan
  • Yasuhiro Shiraki
    Research Center for Advanced Sciences and Technology (RCAST), The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153, Japan

説明

<jats:p>A composition distribution of an AlxGa1−xAs epilayer on a V-grooved substrate grown by low-pressure metalorganic vapor phase epitaxy is described. The aluminum (Al) content of an AlxGa1−xAs epilayer on a V-grooved substrate is found to be on the order of x(111)A≳xtop(100)≳xedge-facet ≳xbottom-intersection by using spectrally and spatially resolved low temperature cathodoluminescence (CL) measurements. The composition difference between (111)A surfaces and bottom intersections is as much as 30%. The resulting spontaneous vertical quantum wells and spontaneous waveguides in the bottom intersections are expected to be applicable in low-threshold current laser devices.</jats:p>

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