Deposition of Y2O3 buffer layers on biaxially-textured metal substrates
書誌事項
- 公開日
- 1998-06
- 権利情報
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- https://www.elsevier.com/tdm/userlicense/1.0/
- DOI
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- 10.1016/s0921-4534(98)00156-7
- 公開者
- Elsevier BV
この論文をさがす
説明
Abstract Biaxially aligned Y2O3 layers useful as buffer layers for high-Tc oxide films have been synthesized on metal tapes through a new and simple method. The Y2O3 buffer layers are deposited on biaxially-textured Ni substrates by an electron beam evaporation technique using Y metal as the evaporation source, and controlling the pressure of the deposition chamber. The obtained Y2O3 films are strongly oriented in-plane and out-of-plane. The φ scan through the Y2O3(222) peaks reveals clear fourfold in-plane symmetry and the in-plane full-width at half maximum (FWHM) of 10.9°. The rocking curve through the Y2O3(400) peak reveals the out-of-plane FWHM of 2.3°. The metal tapes buffered by Y2O3 may be served as long and flexible substrates for high performance biaxially-aligned high-Tc oxide tapes.
収録刊行物
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- Physica C: Superconductivity
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Physica C: Superconductivity 302 (1), 51-56, 1998-06
Elsevier BV