WSe<sub>2</sub> Photovoltaic Device Based on Intramolecular p–n Junction

  • Yicheng Tang
    College of Advanced Interdisciplinary Studies National University of Defense Technology Changsha 410073 China
  • Zhen Wang
    Key Laboratory of Space Active Opto‐Electronics Technology and State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai 200083 China
  • Peng Wang
    Key Laboratory of Space Active Opto‐Electronics Technology and State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai 200083 China
  • Feng Wu
    Key Laboratory of Space Active Opto‐Electronics Technology and State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai 200083 China
  • Yueming Wang
    Key Laboratory of Space Active Opto‐Electronics Technology and State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai 200083 China
  • Yunfeng Chen
    Key Laboratory of Space Active Opto‐Electronics Technology and State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai 200083 China
  • Hailu Wang
    Key Laboratory of Space Active Opto‐Electronics Technology and State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai 200083 China
  • Meng Peng
    Key Laboratory of Space Active Opto‐Electronics Technology and State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai 200083 China
  • Chongxin Shan
    Henan Key Laboratory of Diamond Optoelectronic Materials and Devices School of Physics and Engineering Zhengzhou University Zhengzhou 45000 China
  • Zhihong Zhu
    College of Advanced Interdisciplinary Studies National University of Defense Technology Changsha 410073 China
  • Shiqiao Qin
    College of Advanced Interdisciplinary Studies National University of Defense Technology Changsha 410073 China
  • Weida Hu
    Key Laboratory of Space Active Opto‐Electronics Technology and State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai 200083 China

説明

<jats:title>Abstract</jats:title><jats:p>High quality p–n junctions based on 2D layered materials (2DLMs) are urgent to exploit, because of their unique properties such as flexibility, high absorption, and high tunability which may be utilized in next‐generation photovoltaic devices. Based on transfer technology, large amounts of vertical heterojunctions based on 2DLMs are investigated. However, the complicated fabrication process and the inevitable defects at the interfaces greatly limit their application prospects. Here, an in‐plane intramolecular WSe<jats:sub>2</jats:sub> p–n junction is realized, in which the n‐type region and p‐type region are chemically doped by polyethyleneimine and electrically doped by the back‐gate, respectively. An ideal factor of 1.66 is achieved, proving the high quality of the p–n junction realized by this method. As a photovoltaic detector, the device possesses a responsivity of 80 mA W<jats:sup>−1</jats:sup> (≈20% external quantum efficiency), a specific detectivity of over 10<jats:sup>11</jats:sup> Jones and fast response features (200 µs rising time and 16 µs falling time) at zero bias, simultaneously. Moreover, a large open‐circuit voltage of 0.38 V and an external power conversion efficiency of ≈1.4% realized by the device also promises its potential in microcell applications.</jats:p>

収録刊行物

  • Small

    Small 15 (12), 2019-02-20

    Wiley

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