WSe<sub>2</sub> Photovoltaic Device Based on Intramolecular p–n Junction
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- Yicheng Tang
- College of Advanced Interdisciplinary Studies National University of Defense Technology Changsha 410073 China
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- Zhen Wang
- Key Laboratory of Space Active Opto‐Electronics Technology and State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai 200083 China
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- Peng Wang
- Key Laboratory of Space Active Opto‐Electronics Technology and State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai 200083 China
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- Feng Wu
- Key Laboratory of Space Active Opto‐Electronics Technology and State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai 200083 China
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- Yueming Wang
- Key Laboratory of Space Active Opto‐Electronics Technology and State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai 200083 China
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- Yunfeng Chen
- Key Laboratory of Space Active Opto‐Electronics Technology and State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai 200083 China
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- Hailu Wang
- Key Laboratory of Space Active Opto‐Electronics Technology and State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai 200083 China
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- Meng Peng
- Key Laboratory of Space Active Opto‐Electronics Technology and State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai 200083 China
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- Chongxin Shan
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices School of Physics and Engineering Zhengzhou University Zhengzhou 45000 China
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- Zhihong Zhu
- College of Advanced Interdisciplinary Studies National University of Defense Technology Changsha 410073 China
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- Shiqiao Qin
- College of Advanced Interdisciplinary Studies National University of Defense Technology Changsha 410073 China
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- Weida Hu
- Key Laboratory of Space Active Opto‐Electronics Technology and State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai 200083 China
説明
<jats:title>Abstract</jats:title><jats:p>High quality p–n junctions based on 2D layered materials (2DLMs) are urgent to exploit, because of their unique properties such as flexibility, high absorption, and high tunability which may be utilized in next‐generation photovoltaic devices. Based on transfer technology, large amounts of vertical heterojunctions based on 2DLMs are investigated. However, the complicated fabrication process and the inevitable defects at the interfaces greatly limit their application prospects. Here, an in‐plane intramolecular WSe<jats:sub>2</jats:sub> p–n junction is realized, in which the n‐type region and p‐type region are chemically doped by polyethyleneimine and electrically doped by the back‐gate, respectively. An ideal factor of 1.66 is achieved, proving the high quality of the p–n junction realized by this method. As a photovoltaic detector, the device possesses a responsivity of 80 mA W<jats:sup>−1</jats:sup> (≈20% external quantum efficiency), a specific detectivity of over 10<jats:sup>11</jats:sup> Jones and fast response features (200 µs rising time and 16 µs falling time) at zero bias, simultaneously. Moreover, a large open‐circuit voltage of 0.38 V and an external power conversion efficiency of ≈1.4% realized by the device also promises its potential in microcell applications.</jats:p>
収録刊行物
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- Small
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Small 15 (12), 2019-02-20
Wiley
