Hybrid Pixels With Si Photodiode and 4H-SiC MOSFETs Using Direct Heterogeneous Bonding Toward Radiation Hardened CMOS Image Sensors

DOI PDF 被引用文献1件 参考文献17件 オープンアクセス
  • Tatsuya Meguro
    Research Institute for Nanodevices, Hiroshima University, Higashihiroshima, Hiroshima, Japan
  • Akinori Takeyama
    National Institutes for Quantum and Radiological Science and Technology (QST), Takasaki, Japan
  • Takeshi Ohshima
    National Institutes for Quantum and Radiological Science and Technology (QST), Takasaki, Japan
  • Yasunori Tanaka
    National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki, Japan
  • Shin-Ichiro Kuroki
    Research Institute for Nanodevices, Hiroshima University, Higashihiroshima, Hiroshima, Japan

収録刊行物

  • IEEE Electron Device Letters

    IEEE Electron Device Letters 43 (10), 1713-1716, 2022-10

    Institute of Electrical and Electronics Engineers (IEEE)

被引用文献 (1)*注記

もっと見る

参考文献 (17)*注記

もっと見る

関連プロジェクト

もっと見る

詳細情報 詳細情報について

問題の指摘

ページトップへ