In Situ Formation of Oxygen Vacancies Achieving Near‐Complete Charge Separation in Planar BiVO<sub>4</sub> Photoanodes

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  • Songcan Wang
    Frontiers Science Center for Flexible Electronics (FSCFE) Shaanxi Institute of Flexible Electronics (SIFE) & Shaanxi Institute of Biomedical Materials and Engineering (SIBME) Northwestern Polytechnical University (NPU) 127 West Youyi Road Xi'an 710072 China
  • Tianwei He
    School of Chemistry and Physics and Centre for Materials Science Queensland University of Technology Brisbane QLD 4000 Australia
  • Peng Chen
    Nanomaterials Centre School of Chemical Engineering and Australian Institute for Bioengineering and Nanotechnology The University of Queensland Brisbane QLD 4072 Australia
  • Aijun Du
    School of Chemistry and Physics and Centre for Materials Science Queensland University of Technology Brisbane QLD 4000 Australia
  • Kostya (Ken) Ostrikov
    School of Chemistry and Physics and Centre for Materials Science Queensland University of Technology Brisbane QLD 4000 Australia
  • Wei Huang
    Frontiers Science Center for Flexible Electronics (FSCFE) Shaanxi Institute of Flexible Electronics (SIFE) & Shaanxi Institute of Biomedical Materials and Engineering (SIBME) Northwestern Polytechnical University (NPU) 127 West Youyi Road Xi'an 710072 China
  • Lianzhou Wang
    Nanomaterials Centre School of Chemical Engineering and Australian Institute for Bioengineering and Nanotechnology The University of Queensland Brisbane QLD 4072 Australia

書誌事項

公開日
2020-05-14
権利情報
  • http://onlinelibrary.wiley.com/termsAndConditions#am
  • http://onlinelibrary.wiley.com/termsAndConditions#vor
DOI
  • 10.1002/adma.202001385
公開者
Wiley

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<jats:title>Abstract</jats:title><jats:p>Despite a suitable bandgap of bismuth vanadate (BiVO<jats:sub>4</jats:sub>) for visible light absorption, most of the photogenerated holes in BiVO<jats:sub>4</jats:sub> photoanodes are vanished before reaching the surfaces for oxygen evolution reaction due to the poor charge separation efficiency in the bulk. Herein, a new sulfur oxidation strategy is developed to prepare planar BiVO<jats:sub>4</jats:sub> photoanodes with in situ formed oxygen vacancies, which increases the majority charge carrier density and photovoltage, leading to a record charge separation efficiency of 98.2% among the reported BiVO<jats:sub>4</jats:sub> photoanodes. Upon loading NiFeO<jats:italic><jats:sub>x</jats:sub></jats:italic> as an oxygen evolution cocatalyst, a stable photocurrent density of 5.54 mA cm<jats:sup>−2</jats:sup> is achieved at 1.23 V versus the reversible hydrogen electrode (RHE) under AM 1.5 G illumination. Remarkably, a dual‐photoanode configuration further enhances the photocurrent density up to 6.24 mA cm<jats:sup>−2</jats:sup>, achieving an excellent applied bias photon‐to‐current efficiency of 2.76%. This work demonstrates a simple thermal treatment approach to generate oxygen vacancies for the design of efficient planar photoanodes for solar hydrogen production.</jats:p>

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