Enhanced Electrical Conductivity of Sb<sub>2</sub>S<sub>3</sub> Thin Film via C<sub>60</sub> Modification and Improvement in Solar Cell Efficiency

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  • Chunsheng Guo
    Hebei Key Laboratory of Optic‐Electronic Information and Materials College of Physics Science and Technology Hebei University Baoding 071002 China
  • Jingwei Chen
    Hebei Key Laboratory of Optic‐Electronic Information and Materials College of Physics Science and Technology Hebei University Baoding 071002 China
  • Gang Li
    Hebei Key Laboratory of Optic‐Electronic Information and Materials College of Physics Science and Technology Hebei University Baoding 071002 China
  • Xiaoyang Liang
    Hebei Key Laboratory of Optic‐Electronic Information and Materials College of Physics Science and Technology Hebei University Baoding 071002 China
  • Weidong Lai
    Hebei Key Laboratory of Optic‐Electronic Information and Materials College of Physics Science and Technology Hebei University Baoding 071002 China
  • Lin Yang
    Hebei Key Laboratory of Optic‐Electronic Information and Materials College of Physics Science and Technology Hebei University Baoding 071002 China
  • Yaohua Mai
    Hebei Key Laboratory of Optic‐Electronic Information and Materials College of Physics Science and Technology Hebei University Baoding 071002 China
  • Zhiqiang Li
    Hebei Key Laboratory of Optic‐Electronic Information and Materials College of Physics Science and Technology Hebei University Baoding 071002 China

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<jats:title>Abstract</jats:title><jats:p>Sb<jats:sub>2</jats:sub>S<jats:sub>3</jats:sub> has attracted great research interest very recently as a promising absorber material for photoelectric and photovoltaic devices because of its unique optical and electrical properties and single, stable phase. However, the intrinsic high resistivity property of Sb<jats:sub>2</jats:sub>S<jats:sub>3</jats:sub> material is one of the major factors restricting the further improvement of its application. In this work, the C<jats:sub>60</jats:sub> modification of Sb<jats:sub>2</jats:sub>S<jats:sub>3</jats:sub> thin films is investigated. The conductivity of Sb<jats:sub>2</jats:sub>S<jats:sub>3</jats:sub> thin films increases from 4.71 × 10<jats:sup>−9</jats:sup> S cm<jats:sup>−1</jats:sup> for unmodified condition to 2.86 × 10<jats:sup>−8</jats:sup> S cm<jats:sup>−1</jats:sup> for modified thin films. Thin‐film solar cells in the configuration of glass/(SnO<jats:sub>2</jats:sub>:F) FTO/TiO<jats:sub>2</jats:sub>/Sb<jats:sub>2</jats:sub>S<jats:sub>3</jats:sub>(C<jats:sub>60</jats:sub>)/Spiro‐OMeTAD/Au are fabricated, and the conversion efficiency is increased from 1.10% to 1.74%.</jats:p>

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