Ultra-low threshold gallium nitride photonic crystal nanobeam laser

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  • Nan Niu
    Harvard University 1 School of Engineering and Applied Sciences, , Cambridge, Massachusetts 02138, USA
  • Alexander Woolf
    Harvard University 1 School of Engineering and Applied Sciences, , Cambridge, Massachusetts 02138, USA
  • Danqing Wang
    Harvard University 1 School of Engineering and Applied Sciences, , Cambridge, Massachusetts 02138, USA
  • Tongtong Zhu
    University of Cambridge 2 Department of Materials Science and Metallurgy, , 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
  • Qimin Quan
    Rowland Institute at Harvard University 3 , Cambridge, Massachusetts 02142, USA
  • Rachel A. Oliver
    University of Cambridge 2 Department of Materials Science and Metallurgy, , 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
  • Evelyn L. Hu
    Harvard University 1 School of Engineering and Applied Sciences, , Cambridge, Massachusetts 02138, USA

Description

<jats:p>We report exceptionally low thresholds (9.1 μJ/cm2) for room temperature lasing at ∼450 nm in optically pumped Gallium Nitride (GaN) nanobeam cavity structures. The nanobeam cavity geometry provides high theoretical Q (&gt;100 000) with small modal volume, leading to a high spontaneous emission factor, β = 0.94. The active layer materials are Indium Gallium Nitride (InGaN) fragmented quantum wells (fQWs), a critical factor in achieving the low thresholds, which are an order-of-magnitude lower than obtainable with continuous QW active layers. We suggest that the extra confinement of photo-generated carriers for fQWs (compared to QWs) is responsible for the excellent performance.</jats:p>

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