Characterization of platinum films deposited by focused ion beam-assisted chemical vapor deposition

DOI PDF 被引用文献2件
  • K. A. Telari
    Merck and Co., Rahway, New Jersey 07065
  • B. R. Rogers
    Vanderbilt University School of Engineering, Nashville, Tennessee 37235
  • H. Fang
    Vanderbilt University School of Engineering, Nashville, Tennessee 37235
  • L. Shen
    Vanderbilt University School of Engineering, Nashville, Tennessee 37235
  • R. A. Weller
    Vanderbilt University School of Engineering, Nashville, Tennessee 37235
  • D. N. Braski
    Oak Ridge National Labs, Oak Ridge, Tennessee 37831

書誌事項

公開日
2002-03-01
DOI
  • 10.1116/1.1458958
公開者
American Vacuum Society

この論文をさがす

説明

<jats:p>This work presents results from the characterization of ion-assisted chemical vapor deposition of platinum from trimethyl–methylcyclopentadienyl–platinum (C9H16Pt). Films were deposited in squares ranging from 50 to 200 μm on a side using a focused ion beam system. The effects of Ga+ ion flux and precursor flux on the deposited films’ composition and resistivity were determined. Films were characterized using atomic force microscopy, Rutherford backscattering spectrometry, and Auger electron spectroscopy. Results show that increasing precursor flux at constant ion flux increases Pt and C, but decreases Ga content of the film. Increasing ion flux at constant precursor flux increases Pt content, while decreasing C content of the films. Resistivity did not depend on the thickness of 50–200 nm thick films. Resistivity was shown to follow C content, with films with lower C content having lower resistivity.</jats:p>

収録刊行物

被引用文献 (2)*注記

もっと見る

詳細情報 詳細情報について

問題の指摘

ページトップへ