A review of plasma-induced defects: detection, kinetics and advanced management

DOI Web Site Web Site 被引用文献12件 参考文献141件

書誌事項

公開日
2023-06-08
資源種別
journal article
権利情報
  • http://creativecommons.org/licenses/by/4.0
  • https://iopscience.iop.org/info/page/text-and-data-mining
DOI
  • 10.1088/1361-6463/acd9d5
公開者
IOP Publishing

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説明

<jats:title>Abstract</jats:title> <jats:p>Plasma-induced defects are often recognized in state-of-the-art semiconductors, high-efficiency solar cells and high-sensitivity image sensors. These defects are in the form of a dangling bond, bond deformation, or impurity/residual, which impacts on the device performance and reliability. The defects are introduced via plasma-material interactions during manufacturing processes such as deposition, etching and implantation. So, the management of defects throughout the manufacturing is important for high-performance device fabrication. In this review, we overview the generation and recovery of plasma-induced defects in order to develop the defect-managed advanced plasma processing for further improving the device performances. The defect generation and recovery are described, based on the recent results of <jats:italic>in-situ</jats:italic> and real-time detection of plasma-induced defects. Two examples are presented: the growth of hydrogenated amorphous silicon and the surface passivation of crystalline silicon for high-efficiency solar cell applications.</jats:p>

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