Junction Diameter Dependence of Oscillation Frequency of GaN IMPATT Diode Up to 21 GHz
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- Seiya Kawasaki
- Department of Electronics, Nagoya University, Nagoya, Japan
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- Takeru Kumabe
- Department of Electronics, Nagoya University, Nagoya, Japan
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- Yuto Ando
- Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya, Japan
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- Manato Deki
- Venture Business Laboratory, Nagoya University, Nagoya, Japan
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- Hirotaka Watanabe
- Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya, Japan
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- Atsushi Tanaka
- Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya, Japan
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- Yoshio Honda
- Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya, Japan
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- Manabu Arai
- Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya, Japan
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- Hiroshi Amano
- Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya, Japan
書誌事項
- 公開日
- 2023-08
- 資源種別
- journal article
- 権利情報
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- https://ieeexplore.ieee.org/Xplorehelp/downloads/license-information/IEEE.html
- https://doi.org/10.15223/policy-029
- https://doi.org/10.15223/policy-037
- DOI
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- 10.1109/led.2023.3285938
- 公開者
- Institute of Electrical and Electronics Engineers (IEEE)
この論文をさがす
収録刊行物
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- IEEE Electron Device Letters
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IEEE Electron Device Letters 44 (8), 1328-1331, 2023-08
Institute of Electrical and Electronics Engineers (IEEE)
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詳細情報 詳細情報について
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- CRID
- 1360021390572489728
-
- ISSN
- 15580563
- 07413106
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- 資料種別
- journal article
-
- データソース種別
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- Crossref
- KAKEN
- OpenAIRE
