Separate evaluation of interface and oxide hole traps in SiO<sub>2</sub>/GaN MOS structures with below- and above-gap light excitation

DOI Web Site Web Site 被引用文献2件 参考文献30件 オープンアクセス

書誌事項

公開日
2023-12-29
資源種別
journal article
権利情報
  • http://creativecommons.org/licenses/by/4.0/
  • https://iopscience.iop.org/info/page/text-and-data-mining
DOI
  • 10.35848/1882-0786/ad120a
公開者
IOP Publishing

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説明

<jats:title>Abstract</jats:title> <jats:p>Understanding the traps in metal-oxide-semiconductor (MOS) structures is crucial in the fabrication of MOS transistors with high performance and reliability. In this study, we evaluated the hole traps in SiO<jats:sub>2</jats:sub>/GaN MOS structures through photo-assisted capacitance-voltage measurements. Below- and above-gap light was used to distinguish between the contributions of fast interface and slow oxide hole traps. While annealing in oxygen is effective in reducing the oxide hole traps, a high density of hole traps exceeding 10<jats:sup>12 </jats:sup>cm<jats:sup>−2</jats:sup>eV<jats:sup>−1</jats:sup> remains at the interface. Although these traps are donor-type and thus hidden in n-type MOS structures, they could impair the switching performance of GaN MOS transistors.</jats:p>

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