Field-effect transistors engineered via solution-based layer-by-layer nanoarchitectonics

DOI HANDLE Web Site Web Site PubMed 被引用文献10件 参考文献154件

書誌事項

公開日
2023-09-04
資源種別
journal article
権利情報
  • https://publishingsupport.iopscience.iop.org/iop-standard/v1
  • https://iopscience.iop.org/info/page/text-and-data-mining
DOI
  • 10.1088/1361-6528/acef26
公開者
IOP Publishing

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説明

<jats:title>Abstract</jats:title> <jats:p>The layer-by-layer (LbL) technique has been proven to be one of the most versatile approaches in order to fabricate functional nanofilms. The use of simple and inexpensive procedures as well as the possibility to incorporate a very wide range of materials through different interactions have driven its application in a wide range of fields. On the other hand, field-effect transistors (FETs) are certainly among the most important elements in electronics. The ability to modulate the flowing current between a source and a drain electrode via the voltage applied to the gate electrode endow these devices to switch or amplify electronic signals, being vital in all of our everyday electronic devices. In this topical review, we highlight different research efforts to engineer field-effect transistors using the LbL assembly approach. We firstly discuss on the engineering of the channel material of transistors via the LbL technique. Next, the deposition of dielectric materials through this approach is reviewed, allowing the development of high-performance electronic components. Finally, the application of the LbL approach to fabricate FETs-based biosensing devices is also discussed, as well as the improvement of the transistor’s interfacial sensitivity by the engineering of the semiconductor with polyelectrolyte multilayers.</jats:p>

収録刊行物

  • Nanotechnology

    Nanotechnology 34 (47), 472001-, 2023-09-04

    IOP Publishing

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