On-Chip Modification of Titanium Electrothermal Characteristics by Joule Heating: Application to Terahertz Microbolometer

DOI Web Site 参考文献49件 オープンアクセス
  • Durgadevi Elamaran
    Graduate School of Science and Technology, Shizuoka University, Hamamatsu 432-8011, Japan
  • Ko Akiba
    Graduate School of Integrated Science and Technology, Shizuoka University, Hamamatsu 432-8561, Japan
  • Hiroaki Satoh
    Graduate School of Integrated Science and Technology, Shizuoka University, Hamamatsu 432-8561, Japan
  • Amit Banerjee
    Research Institute of Electronics, Shizuoka University, Hamamatsu 432-8011, Japan
  • Norihisa Hiromoto
    Graduate School of Science and Technology, Shizuoka University, Hamamatsu 432-8011, Japan
  • Hiroshi Inokawa
    Graduate School of Science and Technology, Shizuoka University, Hamamatsu 432-8011, Japan

書誌事項

公開日
2024-01-19
資源種別
journal article
権利情報
  • https://creativecommons.org/licenses/by/4.0/
DOI
  • 10.3390/nano14020225
公開者
MDPI AG

説明

<jats:p>This study demonstrates the conversion of metallic titanium (Ti) to titanium oxide just by conducting electrical current through Ti thin film in vacuum and increasing the temperature by Joule heating. This led to the improvement of electrical and thermal properties of a microbolometer. A microbolometer with an integrated Ti thermistor and heater width of 2.7 µm and a length of 50 µm was fabricated for the current study. Constant-voltage stresses were applied to the thermistor wire to observe the effect of the Joule heating on its properties. Thermistor resistance ~14 times the initial resistance was observed owing to the heating. A negative large temperature coefficient of resistance (TCR) of −0.32%/K was also observed owing to the treatment, leading to an improved responsivity of ~4.5 times from devices with untreated Ti thermistors. However, this does not improve the noise equivalent power (NEP), due to the increased flicker noise. Microstructural analyses with transmission electron microscopy (TEM), transmission electron diffraction (TED) and energy dispersive X-ray (EDX) confirm the formation of a titanium oxide (TiOx) semiconducting phase on the Ti phase (~85% purity) deposited initially, further to the heating. Formation of TiOx during annealing could minimize the narrow width effect, which we reported previously in thin metal wires, leading to enhancement of responsivity.</jats:p>

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