Structural and optical properties of vertically stacked triple InAs dot-in-well structure
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- G. Rainò
- Università del Salento 1 National Nanotechnology Laboratory, CNR-INFM Distretto Tecnologico ISUFI, , via Arnesano, 73100 Lecce, Italy
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- A. Salhi
- Università del Salento 1 National Nanotechnology Laboratory, CNR-INFM Distretto Tecnologico ISUFI, , via Arnesano, 73100 Lecce, Italy
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- V. Tasco
- Università del Salento 1 National Nanotechnology Laboratory, CNR-INFM Distretto Tecnologico ISUFI, , via Arnesano, 73100 Lecce, Italy
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- M. De Vittorio
- Università del Salento 1 National Nanotechnology Laboratory, CNR-INFM Distretto Tecnologico ISUFI, , via Arnesano, 73100 Lecce, Italy
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- A. Passaseo
- Università del Salento 1 National Nanotechnology Laboratory, CNR-INFM Distretto Tecnologico ISUFI, , via Arnesano, 73100 Lecce, Italy
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- R. Cingolani
- Università del Salento 1 National Nanotechnology Laboratory, CNR-INFM Distretto Tecnologico ISUFI, , via Arnesano, 73100 Lecce, Italy
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- M. De Giorgi
- Università del Salento 1 National Nanotechnology Laboratory, CNR-INFM Distretto Tecnologico ISUFI, , via Arnesano, 73100 Lecce, Italy
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- E. Luna
- Paul-Drude-Institut für Festkörperelektronik 2 , Hausvogteiplatz 5-7, Berlin D-10117, Germany
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- A. Trampert
- Paul-Drude-Institut für Festkörperelektronik 2 , Hausvogteiplatz 5-7, Berlin D-10117, Germany
書誌事項
- 公開日
- 2008-05-01
- DOI
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- 10.1063/1.2921266
- 公開者
- AIP Publishing
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説明
<jats:p>The authors report a detailed investigation of the structural and optical properties of vertically stacked InAs quantum dots embedded in an (In,Ga)As quantum well by means of transmission electron microscopy and time resolved photoluminescence based on the upconversion technique. By comparing the optical features of quantum dot samples of different barrier thicknesses (nominal values between 5 and 65nm), they have found evidence for electronic coupling among the quantum dots, featured by an increase of radiative lifetime and a relatively blueshifted emission peak for the thinnest spacer layer sample.</jats:p>
収録刊行物
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- Journal of Applied Physics
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Journal of Applied Physics 103 (9), 096107-, 2008-05-01
AIP Publishing