Tungsten Oxide Mediated Quasi-van der Waals Epitaxy of WS<sub>2</sub> on Sapphire
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- Assael Cohen
- Department of Materials Science and Engineering, Tel Aviv University, Ramat Aviv, Tel Aviv 6997801, Israel
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- Pranab K. Mohapatra
- Department of Materials Science and Engineering, Tel Aviv University, Ramat Aviv, Tel Aviv 6997801, Israel
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- Simon Hettler
- Laboratorio de Microscopías Avanzadas (LMA), Universidad de Zaragoza, 50018 Zaragoza, Spain
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- Avinash Patsha
- Department of Materials Science and Engineering, Tel Aviv University, Ramat Aviv, Tel Aviv 6997801, Israel
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- Pini Shekhter
- Center for Nanoscience and Nanotechnology, Tel Aviv University, Tel Aviv 6997801, Israel
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- Oswaldo Dieguez
- Department of Materials Science and Engineering, Tel Aviv University, Ramat Aviv, Tel Aviv 6997801, Israel
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- Raul Arenal
- Laboratorio de Microscopías Avanzadas (LMA), Universidad de Zaragoza, 50018 Zaragoza, Spain
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- Ariel Ismach
- Department of Materials Science and Engineering, Tel Aviv University, Ramat Aviv, Tel Aviv 6997801, Israel
書誌事項
- 公開日
- 2023-03-08
- 権利情報
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- https://creativecommons.org/licenses/by/4.0/
- DOI
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- 10.1021/acsnano.2c09754
- 公開者
- American Chemical Society (ACS)
この論文をさがす
収録刊行物
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- ACS Nano
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ACS Nano 17 (6), 5399-5411, 2023-03-08
American Chemical Society (ACS)
