Molecular beam epitaxial growth of high quality InSb

DOI PDF 被引用文献2件
  • E. Michel
    The Center for Quantum Devices, Northwestern University, Evanston, Illinois 60208
  • G. Singh
    The Center for Quantum Devices, Northwestern University, Evanston, Illinois 60208
  • S. Slivken
    The Center for Quantum Devices, Northwestern University, Evanston, Illinois 60208
  • C. Besikci
    The Center for Quantum Devices, Northwestern University, Evanston, Illinois 60208
  • P. Bove
    The Center for Quantum Devices, Northwestern University, Evanston, Illinois 60208
  • I. Ferguson
    The Center for Quantum Devices, Northwestern University, Evanston, Illinois 60208
  • M. Razeghi
    The Center for Quantum Devices, Northwestern University, Evanston, Illinois 60208

書誌事項

公開日
1994-12-26
DOI
  • 10.1063/1.112384
公開者
AIP Publishing

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説明

<jats:p>In this letter we report on the growth of high quality InSb by molecular beam epitaxy that has been optimized using reflection high energy electron diffraction. A 4.8 μm InSb layer grown on GaAs at a growth temperature of 395 °C and a III/V incorporation ratio of 1:1.2 had an x-ray rocking curve of 158 arcsec and a Hall mobility of 92 300 cm2 V−1 at 77 K. This is the best material quality obtained for InSb nucleated directly onto GaAs reported to date.</jats:p>

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