One-dimensional edge contact to encapsulated MoS2 with a superconductor

DOI DOI HANDLE PDF 被引用文献1件 オープンアクセス
  • A. Seredinski
    School of Sciences and Humanities, Wentworth Institute of Technology 1 , Boston, Massachusetts 02115, USA
  • E. G. Arnault
    Department of Physics, Duke University 2 , Durham, North Carolina 27708, USA
  • V. Z. Costa
    Department of Physics and Astronomy, San Francisco State University 3 , San Francisco, California 94132, USA
  • L. Zhao
    Department of Physics, Duke University 2 , Durham, North Carolina 27708, USA
  • T. F. Q. Larson
    Department of Physics, Duke University 2 , Durham, North Carolina 27708, USA
  • K. Watanabe
    National Institute for Materials Science 4 , Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan
  • T. Taniguchi
    National Institute for Materials Science 4 , Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan
  • F. Amet
    Department of Physics and Astronomy, Appalachian State University 5 , Boone, North Carolina 28607, USA
  • A. K. M. Newaz
    Department of Physics and Astronomy, San Francisco State University 3 , San Francisco, California 94132, USA
  • G. Finkelstein
    Department of Physics, Duke University 2 , Durham, North Carolina 27708, USA

説明

<jats:p>Establishing ohmic contact to van der Waals semiconductors such as MoS2 is crucial to unlocking their full potential in next-generation electronic devices. Encapsulation of few layer MoS2 with hBN preserves the material’s electronic properties but makes electrical contacts more challenging. Progress toward high quality edge contact to encapsulated MoS2 has been recently reported. Here, we evaluate a contact methodology using sputtered MoRe, a type II superconductor with a relatively high critical field and temperature commonly used to induce superconductivity in graphene. We find that the contact transparency is poor and that the devices do not support a measurable supercurrent down to 3 K, which has ramifications for future fabrication recipes.</jats:p>

収録刊行物

  • AIP Advances

    AIP Advances 11 (4), 2021-04-01

    AIP Publishing

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