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- Juntong Chen
- School of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei 230026, China
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- Jianxun Liu
- School of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei 230026, China
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- Yingnan Huang
- School of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei 230026, China
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- Ruisen Liu
- Guangdong Institute of Semiconductor Micro-Nano Manufacturing Technology, Foshan 528000, China
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- Yayu Dai
- School of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei 230026, China
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- Leming Tang
- Guangdong Institute of Semiconductor Micro-Nano Manufacturing Technology, Foshan 528000, China
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- Zheng Chen
- Guangdong Institute of Semiconductor Micro-Nano Manufacturing Technology, Foshan 528000, China
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- Xiujian Sun
- School of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei 230026, China
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- Chenshu Liu
- School of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei 230026, China
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- Shuming Zhang
- School of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei 230026, China
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- Qian Sun
- School of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei 230026, China
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- Meixin Feng
- School of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei 230026, China
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- Qiming Xu
- GuSu Laboratory of Materials, Suzhou 215123, China
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- Hui Yang
- School of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei 230026, China
説明
<jats:p>Heteroepitaxial growth of high Al-content AlGaN often results in a high density of threading dislocations and surface hexagonal hillocks, which degrade the performance and reliability of AlGaN-based UVC light emitting diodes (LEDs). In this study, the degradation mechanism and impurity/defect behavior of UVC LEDs in relation to the hexagonal hillocks have been studied in detail. It was found that the early degradation of UVC LEDs is primarily caused by electron leakage. The prominent contribution of the hillock edges to the electron leakage is unambiguously evidenced by the transmission electron microscopy measurements, time-of-flight secondary ion mass spectrometry, and conductive atomic force microscopy. Dislocations bunching and segregation of impurities, including C, O, and Si, at the hillock edges are clearly observed, which facilitate the trap-assisted carrier tunneling in the multiple quantum wells and subsequent recombination in the p-AlGaN. This work sheds light on one possible degradation mechanism of AlGaN-based UVC LEDs.</jats:p>
収録刊行物
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- Nanomaterials
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Nanomaterials 13 (9), 1562-, 2023-05-06
MDPI AG
