Novel bulk dynamic threshold voltage MOSFET (B-DTMOS) with advanced isolation (SITOS) and gate to shallow-well contact (SSS-C) processes for ultra low power dual gate CMOS

詳細情報 詳細情報について

• CRID

  1360022497213237760

• DOI

  10.1109/iedm.1996.553626

• Web Site

  http://xplorestaging.ieee.org/ielx3/4251/12029/00553626.pdf?arnumber=553626

• データソース種別

  • Crossref