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Van der Waals Epitaxial Double Heterostructure: InAs/Single‐Layer Graphene/InAs
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- Young Joon Hong
- Department of Nanotechnology and Advanced Materials Engineering Graphene Research Institute and Hybrid Materials Research Center Sejong University Seoul 143–747 Korea
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- Jae Won Yang
- Department of Chemistry Center for Superfunctional Materials Pohang University of Science and Technology (POSTECH) Pohang 790–784 Korea
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- Wi Hyoung Lee
- Department of Organic and Nano System Engineering Konkuk University Seoul 143–701 Korea
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- Rodney S. Ruoff
- Department of Mechanical Engineering and the Materials Science and Engineering Program The University of Texas at Austin Austin TX 78712 United States
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- Kwang S. Kim
- Department of Chemistry Center for Superfunctional Materials Pohang University of Science and Technology (POSTECH) Pohang 790–784 Korea
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- Takashi Fukui
- Research Center for Integrated Quantum Electronics Hokkaido University Sapporo 060–8628 Japan
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Description
Van der Waals (vdW) epitaxial double heterostructures have been fabricated by vdW epitaxy of InAs nanostructures on both sides of graphene. InAs nanostructures diametrically form on/underneath graphene exclusively along As-polar direction, indicating polarity inversion of the double heterostructures. First-principles and density functional calculations demonstrate how and why InAs easily form to be double heterostructures with polarity inversion.
Journal
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- Advanced Materials
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Advanced Materials 25 (47), 6847-6853, 2013-09-25
Wiley
