Boron nitride substrates for high mobility chemical vapor deposited graphene

DOI PDF 被引用文献31件 参考文献28件
  • W. Gannett
    University of California 1 Department of Physics, , Berkeley, California 94720, USA
  • W. Regan
    University of California 1 Department of Physics, , Berkeley, California 94720, USA
  • K. Watanabe
    National Institute for Materials Science 3 Advanced Material Laboratory, , 1-1 Namiki, Tsukuba 305-0044, Japan
  • T. Taniguchi
    National Institute for Materials Science 3 Advanced Material Laboratory, , 1-1 Namiki, Tsukuba 305-0044, Japan
  • M. F. Crommie
    University of California 1 Department of Physics, , Berkeley, California 94720, USA
  • A. Zettl
    University of California 1 Department of Physics, , Berkeley, California 94720, USA

説明

<jats:p>Chemical vapor deposited (CVD) graphene is often presented as a scalable solution to graphene device fabrication, but to date such graphene has exhibited lower mobility than that produced by exfoliation. Using a boron nitride underlayer, we achieve mobilities as high as 37 000 cm2/V s, an order of magnitude higher than commonly reported for CVD graphene and better than most exfoliated graphene. This result demonstrates that the barrier to scalable, high mobility CVD graphene is not the growth technique but rather the choice of a substrate that minimizes carrier scattering.</jats:p>

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