Boron nitride substrates for high mobility chemical vapor deposited graphene
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- W. Gannett
- University of California 1 Department of Physics, , Berkeley, California 94720, USA
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- W. Regan
- University of California 1 Department of Physics, , Berkeley, California 94720, USA
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- K. Watanabe
- National Institute for Materials Science 3 Advanced Material Laboratory, , 1-1 Namiki, Tsukuba 305-0044, Japan
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- T. Taniguchi
- National Institute for Materials Science 3 Advanced Material Laboratory, , 1-1 Namiki, Tsukuba 305-0044, Japan
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- M. F. Crommie
- University of California 1 Department of Physics, , Berkeley, California 94720, USA
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- A. Zettl
- University of California 1 Department of Physics, , Berkeley, California 94720, USA
Description
<jats:p>Chemical vapor deposited (CVD) graphene is often presented as a scalable solution to graphene device fabrication, but to date such graphene has exhibited lower mobility than that produced by exfoliation. Using a boron nitride underlayer, we achieve mobilities as high as 37 000 cm2/V s, an order of magnitude higher than commonly reported for CVD graphene and better than most exfoliated graphene. This result demonstrates that the barrier to scalable, high mobility CVD graphene is not the growth technique but rather the choice of a substrate that minimizes carrier scattering.</jats:p>
Journal
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- Applied Physics Letters
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Applied Physics Letters 98 (24), 242105-, 2011-06-13
AIP Publishing
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Details 詳細情報について
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- CRID
- 1360283692068692480
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- ISSN
- 10773118
- 00036951
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- Data Source
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- Crossref
- KAKEN