Analysis of Disorder Scattering in Ga<sub>0.47</sub>In<sub>0.53</sub>As Using Gaussian Potential
抄録
<jats:p> Disorder scattering mobility in Ga<jats:sub>0.47</jats:sub>In<jats:sub>0.53</jats:sub>As is calculated by using a sum of two Gaussian potentials; one representing the difference of strong short range core potentials and the other representing the relatively long range potential, the existence of which has been suggested by our previous paper. Approximate calculations are made and a much steeper temperature dependency than the Brooks' disorder scattering mobility is predicted giving good agreement with the recent mobility measurements. </jats:p>
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 22 (3R), 504-, 1983-03-01
IOP Publishing
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詳細情報 詳細情報について
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- CRID
- 1360284921814621824
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- NII論文ID
- 210000022627
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- ISSN
- 13474065
- 00214922
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- データソース種別
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