A Comment on Defects in GaAs Crystals Observed by Infrared Light Scattering Tomography and IR Absorption Microscopy
Abstract
<jats:p> Infrared light scattering and absorption due to electrons trapped by centers with a hydrogen-like structure are discussed and the following reported evidences are explained: (a) enhancement of IR scattering without clear change of IR absorption due to ingot annealing of GaAs crystals and (2) light scattering after bleaching of IR absorption in GaAs atlow temperature. </jats:p>
Journal
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 25 (11A), L916-, 1986-11-01
IOP Publishing
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Details 詳細情報について
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- CRID
- 1360284921815472256
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- NII Article ID
- 210000025114
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- ISSN
- 13474065
- 00214922
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- Data Source
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- Crossref
- CiNii Articles