GaAlAs/GaAs Surface Emitting Laser with High Reflective TiO<sub>2</sub>/SiO<sub>2</sub> Multilayer Bragg Reflector

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<jats:p> First, it has been made clear that the important parameters of the SE laser are its active layer thickness <jats:italic>d</jats:italic> and the mirror reflectivity <jats:italic>R</jats:italic>. The required values of three parameters such as threshold gain <jats:italic>g</jats:italic> <jats:sub>th</jats:sub>, threshold current density <jats:italic>J</jats:italic> <jats:sub>th</jats:sub>, and differencial quantum efficiency η<jats:sub>d</jats:sub> are obtained for <jats:italic>d</jats:italic>=2∼3 µm and <jats:italic>R</jats:italic>=95%. At this condition <jats:italic>g</jats:italic> <jats:sub>th</jats:sub> is estimated as 300 cm<jats:sup>-1</jats:sup> (<jats:italic>N</jats:italic> <jats:sub>th</jats:sub>=3×10<jats:sup>18</jats:sup> cm<jats:sup>-3</jats:sup>), <jats:italic>J</jats:italic> <jats:sub>th</jats:sub> is 25∼30 kA/cm<jats:sup>2</jats:sup>, and η<jats:sub>d</jats:sub> is 40%. Next, in order to obtain a reflectivity as high as 95%, a TiO<jats:sub>2</jats:sub>/SiO<jats:sub>2</jats:sub> multilayer Bragg reflector was introduced. It was found that a good quality TiO<jats:sub>2</jats:sub> film could be evaporated by leaking oxygen through a variable leak valve to hold 1×10<jats:sup>-4</jats:sup> Torr. Then, a 7-pair TiO<jats:sub>2</jats:sub>/SiO<jats:sub>2</jats:sub> multilayer Bragg reflector was fabricated; its peak reflectivity was 95% at 8800 Å. A room-temperature pulsed operation of a GaAlAs/GaAs SE layer was achieved and the minimum threshold current was reduced to as low as 150 mA when a round mesa was fabricated to 20 µm in diam. </jats:p>

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