Effects of Growth Temperature and V/III Ratio on MOCVD-Grown GaAs-on-Si
説明
<jats:p> Effects of growth temperature and V/III ratio on surface morphology, crystallinity and residual impurities of MOCVD-grown GaAs-on-Si have been studied. The effects are different from those on MOCVD-grown GaAs-on-GaAs. The difference arises from the heteroepitaxial problems. High silicon concentrations are found in all the GaAs-on-Si, and the electrical activation of silicon as a donor reaches 100% for higher growth temperatures. Crystallinity improves but surface morphology degrades with increasing growth temperature. The trade-off between crystallinity and surface morphology has been eliminated by the three-step growth process. </jats:p>
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 29 (1R), 138-, 1990-01-01
IOP Publishing
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詳細情報 詳細情報について
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- CRID
- 1360284921816853888
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- NII論文ID
- 210000028860
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- ISSN
- 13474065
- 00214922
- http://id.crossref.org/issn/00214922
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- データソース種別
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- Crossref
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