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説明
<jats:p> Room-temperature photoacoustic (PA) spectra of p-type silicon single crystals were measured by using a piezoelectric transducer as a detector. Two peaks at 1.08 and 1.20 eV were observed. Since the peak at 1.08 eV appears only in boron-doped p-type samples, we consider this peak to be due to the boron impurity level. The 1.20 eV peak beyond the band gap observed for both p- and n-type samples is considered to be an apparent one due to the bending of the sample in the highly absorbing region. The effect of the modulation frequency and the detector geometries are explained well by taking into account the sample bending and the pyroelectric effect. </jats:p>
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 29 (5R), 887-, 1990-05-01
IOP Publishing
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詳細情報 詳細情報について
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- CRID
- 1360284921817024256
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- NII論文ID
- 210000029350
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- ISSN
- 13474065
- 00214922
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