Dependence of Band Offsets on Elastic Strain in GaAs/GaAs<sub>1-x</sub>P<sub>x</sub> Strained-Layer Single Quantum Wells

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<jats:p> High-quality GaAs/GaAs<jats:sub>1-<jats:italic>x</jats:italic> </jats:sub>P<jats:sub> <jats:italic>x</jats:italic> </jats:sub> (<jats:italic>x</jats:italic>=0.15, 0.20, 0.22) strained-layer single quantum well structures have been grown on GaAs<jats:sub>1-<jats:italic>y</jats:italic> </jats:sub>P<jats:sub> <jats:italic>y</jats:italic> </jats:sub> (<jats:italic>y</jats:italic>=0.1, 0.2) substrates by metal organic vapor phase epitaxy (MOVPE) and characterized by the combination of the reflectance and photoluminescence measurements. Relying on the strong and highly resolved optical transitions between the energy subbands of electrons and holes (including heavy and light holes) in the spectra, we have accurately determined the conduction and valence band offsets in this strained system. The results obtained clarify for the first time that the band offsets are strongly dependent on elastic strain or composition. </jats:p>

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