Metal Schottky Source/Drain Technology for Ultrathin Silicon-on-Thin-Box Metal Oxide Semiconductor Field Effect Transistors
書誌事項
- 公開日
- 2011-04-01
- 権利情報
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- https://iopscience.iop.org/page/copyright
- https://iopscience.iop.org/info/page/text-and-data-mining
- DOI
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- 10.1143/jjap.50.04dc06
- 公開者
- IOP Publishing
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説明
<jats:p> This paper reports novel, non-epitaxial raised source/drain (S/D) approaches to decrease the parasitic external resistance in complementary metal–oxide–semiconductor field-effect transistors (CMOSFETs) fabricated on ultrathin silicon on insulator (UTSOI). This technique utilizes a metal Schottky S/D process with dopant segregation. Selectively formed NiSi<jats:sub>2</jats:sub> with dopant segregation fabricated by laser-spike annealing (LSA) significantly lowered effective Shottky-barrier height and, thereby, lowered contact resistance (ρ<jats:sub>c</jats:sub>). Satisfying the requirements of UTSOI MOSFETs in the 32-nm node for low stand-by power (LSTP) application, external parasitic resistance was reduced to 140 (NMOS) and 350 (PMOS) Ω µm. Our results show that ρ<jats:sub>c</jats:sub> is an important component of parasitic resistance in terms of improving device performance of UTSOI MOSFETs. </jats:p>
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 50 (4S), 04DC06-, 2011-04-01
IOP Publishing
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詳細情報 詳細情報について
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- CRID
- 1360284921832822016
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- NII論文ID
- 210000070263
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- ISSN
- 13474065
- 00214922
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