Chiral-Structure-Driven Split Fermi Surface Properties in TaSi<sub>2</sub>, NbSi<sub>2</sub>, and VSi<sub>2</sub>

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  • Yoshichika Ōnuki
    Faculty of Science, University of the Ryukyus, Nishihara, Okinawa 903-0213, Japan
  • Ai Nakamura
    Graduate School of Engineering and Science, University of the Ryukyus, Nishihara, Okinawa 903-0213, Japan
  • Taro Uejo
    Graduate School of Engineering and Science, University of the Ryukyus, Nishihara, Okinawa 903-0213, Japan
  • Atsushi Teruya
    Graduate School of Engineering and Science, University of the Ryukyus, Nishihara, Okinawa 903-0213, Japan
  • Masato Hedo
    Faculty of Science, University of the Ryukyus, Nishihara, Okinawa 903-0213, Japan
  • Takao Nakama
    Faculty of Science, University of the Ryukyus, Nishihara, Okinawa 903-0213, Japan
  • Fuminori Honda
    Institute for Materials Research, Tohoku University, Oarai, Ibaraki 311-1313, Japan
  • Hisatomo Harima
    Graduate School of Science, Kobe University, Kobe 657-8501, Japan

Description

We carried out de Haas–van Alphen (dHvA) experiments for TaSi2, NbSi2, and VSi2 with the hexagonal chiral structure, and compared them with the results of energy band calculations. The Fermi surface is found to be split into two different Fermi surfaces, reflecting the non-centrosymmetric crystal structure. A magnitude of the antisymmetric spin–orbit interaction or a splitting energy between the two Fermi surfaces is determined to be 493 K for dHvA branch α (α′) and 564 K for branch β (β′), where these dHvA branches correspond to main Fermi surfaces. The present splitting values are compared with 209 and 244 K in NbSi2, and 19 and 39 K in VSi2, respectively. The splitting energy is found to be larger in the Ta-5d conduction electrons than those with the Nb-4d and V-3d conduction electrons.

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