Influence of substrate misorientation on carbon impurity incorporation and electrical properties of p-GaN grown by metalorganic chemical vapor deposition

詳細情報 詳細情報について

• CRID

  1360284924859884544

• NII論文ID

  210000135686

• DOI

  10.7567/1882-0786/ab0da2

• ISSN

  18820786

  18820778

• Web Site

  http://iopscience.iop.org/article/10.7567/1882-0786/ab0da2

  http://iopscience.iop.org/article/10.7567/1882-0786/ab0da2/pdf

  http://stacks.iop.org/1882-0786/12/i=5/a=055503/pdf

  http://stacks.iop.org/1882-0786/12/i=5/a=055503?key=crossref.1ff736338f8b675cda12eb4376e2ebd2

• データソース種別

  • Crossref
  • CiNii Articles