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Low-temperature diffusion assisted by femtosecond laser-induced modifications at Ni/SiC interface
Bibliographic Information
- Published
- 2017-12-27
- Resource Type
- journal article
- Rights Information
-
- http://iopscience.iop.org/info/page/text-and-data-mining
- http://iopscience.iop.org/page/copyright
- DOI
-
- 10.7567/apex.11.016502
- Publisher
- IOP Publishing
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Description
We investigated low-temperature diffusion at the Ni/SiC interface with the assistance of femtosecond laser-induced modifications. Cross sections of the laser-irradiated lines of two different pulse energies — 0.84 and 0.60 J/cm2 in laser fluence — were compared before and after annealing at 673 K. At the laser fluence of 0.60 J/cm2, a single flat Ni-based particle was formed at the interface after annealing. The SiC crystal under the particle was defect-free. The present results suggest the potential application of femtosecond laser-induced modifications to the low-temperature fabrication of contacts at the interface without introducing crystal defects, e.g., dislocations and stacking faults, in SiC.
Journal
-
- Applied Physics Express
-
Applied Physics Express 11 (1), 016502-, 2017-12-27
IOP Publishing
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Details 詳細情報について
-
- CRID
- 1360284924860328960
-
- NII Article ID
- 210000136095
-
- ISSN
- 18820786
- 18820778
- http://id.crossref.org/issn/18820786
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- Article Type
- journal article
-
- Data Source
-
- Crossref
- CiNii Articles
- KAKEN
- OpenAIRE
