Effect of anode buffer layer on the efficiency of inverted quantum-dot light-emitting diodes

Ye Ram Cho, Pil-Gu Kang, Dong Heon Shin, Ji-Hoon Kim, Min-Jae Maeng, Jeonghun Sakong, Jong-Am Hong, Yongsup Park, Min Chul Suh

doi:10.7567/apex.9.012103

Effect of anode buffer layer on the efficiency of inverted quantum-dot light-emitting diodes

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<jats:title>Abstract</jats:title><jats:p>The impact of anode buffer layers (ABLs) on the performance of CdSe quantum-dot light-emitting diodes (QLED) with a ZnO nanoparticle (NP) electron-transport layer and 4,4′-cyclohexylidenebis[<jats:italic>N</jats:italic>,<jats:italic>N</jats:italic>-bis(4-methylphenyl)benzenamine] (TAPC) hole-transport layer was studied. Either MoO<jats:sub>3</jats:sub>or 1,4,5,8,9,11-hexaazatriphenylene hexacarbonitrile (HAT-CN) was used as the ABL. The QLED with a HAT-CN ABL exhibited better luminance performance, while the ultraviolet photoelectron spectroscopy and hole-only devices indicated that MoO<jats:sub>3</jats:sub>was a superior hole injector. These results suggest that the QLED with a MoO<jats:sub>3</jats:sub>ABL suffered from a severe charge carrier imbalance. Therefore, electron injection through the ZnO NP layer must be improved to further enhance the QLED performance.</jats:p>