Large lateral photovoltaic effect in µc-SiO<sub>x</sub>:H/a-Si:H/c-Si p–i–n structure

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<jats:title>Abstract</jats:title> <jats:p>In this paper, we report on a large lateral photovoltaic effect (LPE) in a hydrogenated microcrystal silicon-oxygen (µc-SiO<jats:italic> <jats:sub>x</jats:sub> </jats:italic>:H)-based p–i–n structure. Compared with LPE in a hydrogenated amorphous silicon (a-Si:H)-based p–i–n structure, this structure showed an abnormal current–voltage (<jats:italic>I</jats:italic>–<jats:italic>V</jats:italic>) curve with a lower photoelectric conversion efficiency, but exhibited a much higher LPE with the highest position sensitivity of 64.3 mV/mm. We ascribe this to the enhancement of the lateral gradient of excess transmitted carriers induced by increasing both Schottky barrier and p-type layer body conductivity. Our results suggest that this µc-SiO<jats:italic> <jats:sub>x</jats:sub> </jats:italic>:H-based p–i–n structure may be a promising candidate for position-sensitive detectors (PSDs). Moreover, our results may also imply that solar cell devices with abnormal <jats:italic>I</jats:italic>–<jats:italic>V</jats:italic> curves (or low efficiency) could find their new applications in other aspects.</jats:p>

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