Low <i>k</i>-dielectric benzocyclobutane encapsulated AlGaN/GaN HEMTs with Improved off-state breakdown voltage

詳細情報 詳細情報について

• CRID

  1360284924866515456

• NII論文ID

  210000144870

• DOI

  10.7567/jjap.54.036504

• ISSN

  13474065

  00214922

• Web Site

  http://stacks.iop.org/1347-4065/54/i=3/a=036504/pdf

  http://stacks.iop.org/1347-4065/54/i=3/a=036504?key=crossref.a744778bde0d2d571c40c7c57d9565c8

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