Surface activated bonding between bulk single crystal diamond and bulk aluminum
Description
<jats:title>Abstract</jats:title> <jats:p>Direct bonding between single crystal diamond and bulk aluminum was successfully achieved by surface activated bonding in vacuum at room temperature. The resultant interface was observed by transmission electron microscopy. During the surface activation process, the surface of the diamond was disordered by argon fast atom bombardment. Consequently, a defect structure of the diamond with a width of 5.8 nm was observed at the bonded interface. According to the results of X-ray photoelectron spectroscopy, 26% of the diamond exhibited induced radiation damage as a defect diamond layer; however the rest remained as intrinsic diamond.</jats:p>
Journal
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 54 (8), 081301-, 2015-07-01
IOP Publishing
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Details 詳細情報について
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- CRID
- 1360284924866787968
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- NII Article ID
- 210000145491
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- ISSN
- 13474065
- 00214922
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- Data Source
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- Crossref
- CiNii Articles