Postsynthesis of h‐BN/Graphene Heterostructures Inside a STEM
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- Zheng Liu
- Nanomaterials Research Institute National Institute of Advanced Industrial Science and Technology (AIST) Tsukuba 305‐8565 Japan
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- Luiz H. G. Tizei
- Laboratoire de Physique des Solides Université Paris‐Sud CNRS‐UMR 8502 Orsay 91405 France
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- Yohei Sato
- Division of Electron Crystallography and Spectroscopy Tohoku University Sendai 980‐8577 Japan
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- Yung‐Chang Lin
- Nanomaterials Research Institute National Institute of Advanced Industrial Science and Technology (AIST) Tsukuba 305‐8565 Japan
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- Chao‐Hui Yeh
- Department of Electrical Engineering National Tsing Hua University Hsinchu 30013 Taiwan
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- Po‐Wen Chiu
- Department of Electrical Engineering National Tsing Hua University Hsinchu 30013 Taiwan
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- Masami Terauchi
- Division of Electron Crystallography and Spectroscopy Tohoku University Sendai 980‐8577 Japan
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- Sumio Iijima
- Meijo University Department of Materials Science and Engeering Nagoya 468‐8502 Japan
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- Kazu Suenaga
- Nanomaterials Research Institute National Institute of Advanced Industrial Science and Technology (AIST) Tsukuba 305‐8565 Japan
Description
Combinations of 2D materials with different physical properties can form heterostructures with modified electrical, mechanical, magnetic, and optical properties. The direct observation of a lateral heterostructure synthesis is reported by epitaxial in-plane graphene growth from the step-edge of hexagonal BN (h-BN) within a scanning transmission electron microscope chamber. Residual hydrocarbon in the chamber is the carbon source. The growth interface between h-BN and graphene is atomically identified as largely N-C bonds. This postgrowth method can form graphene nanoribbons connecting two h-BN domains with different twisting angles, as well as isolated carbon islands with arbitrary shapes embedded in the h-BN layer. The electronic properties of the vertically stacked h-BN/graphene heterostructures are investigated by electron energy-loss spectroscopy (EELS). Low-loss EELS analysis of the dielectric response suggests a robust coupling effect between the graphene and h-BN layers.
Journal
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- Small
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Small 12 (2), 252-259, 2015-11-30
Wiley