Bias- and Gate-Tunable Gas Sensor Response Originating from Modulation in the Schottky Barrier Height of a Graphene/MoS<sub>2</sub> van der Waals Heterojunction

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  • Hiroshi Tabata
    Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
  • Yuta Sato
    Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
  • Kouhei Oi
    Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
  • Osamu Kubo
    Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
  • Mitsuhiro Katayama
    Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan

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We report on the gas-sensing characteristics of a van der Waals heterojunction consisting of graphene and a MoS2 flake. To extract the response actually originating from the heterojunction area, the other gas-sensitive parts were passivated by gas barrier layers. The graphene/MoS2 heterojunction device demonstrated a significant change in resistance, by a factor of greater than 103, upon exposure to 1 ppm NO2 under a reverse-bias condition, which was revealed to be a direct reflection of the modulation of the Schottky barrier height at the graphene/MoS2 interface. The magnitude of the response demonstrated strong dependences on the bias and back-gate voltages. The response further increased with increasing reverse bias. Conversely, it dramatically decreased when measured at a large forward bias or a large positive back-gate voltage. These behaviors were analyzed using a metal-semiconductor-metal diode model consisting of graphene/MoS2 and counter Ti/MoS2 Schottky diodes.

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