Effect of Gas Pressure on the Density of Horizontally Aligned Single-Walled Carbon Nanotubes Grown on Quartz Substrates
-
- Taiki Inoue
- Department of Mechanical Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
-
- Daisuke Hasegawa
- Department of Mechanical Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
-
- Saifullah Badar
- Department of Mechanical Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
-
- Shinya Aikawa
- Department of Mechanical Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
-
- Shohei Chiashi
- Department of Mechanical Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
-
- Shigeo Maruyama
- Department of Mechanical Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
Description
We investigate the influence of gas pressure on the growth of horizontally aligned single-walled carbon nanotubes (SWCNTs) on R-cut and r-cut crystal quartz substrates by alcohol catalytic chemical vapor deposition (CVD). The density of horizontally aligned SWCNTs was found to depend highly on gas pressure. A study of the SWCNT growth as a function of CVD time revealed that the density of horizontally aligned SWCNTs continued to increase for 10 min at reduced pressure, whereas the density saturated rapidly at higher pressure even though catalysts were not deactivated. We argue that variation of incubation time for low-pressure CVD is key for independent growth of horizontally aligned SWCNTs and hence higher density growth.
Journal
-
- The Journal of Physical Chemistry C
-
The Journal of Physical Chemistry C 117 (22), 11804-11810, 2013-05-28
American Chemical Society (ACS)
- Tweet
Details 詳細情報について
-
- CRID
- 1360285708212165504
-
- ISSN
- 19327455
- 19327447
-
- Data Source
-
- Crossref
- KAKEN
- OpenAIRE