Extremely high internal quantum efficiencies from AlGaN/AlN quantum wells emitting in the deep ultraviolet spectral region

DOI PDF 被引用文献19件 参考文献17件
  • Ryan G. Banal
    Kyoto University Department of Electronic Science and Engineering, , Kyoto 615-8510, Japan
  • Mitsuru Funato
    Kyoto University Department of Electronic Science and Engineering, , Kyoto 615-8510, Japan
  • Yoichi Kawakami
    Kyoto University Department of Electronic Science and Engineering, , Kyoto 615-8510, Japan

説明

<jats:p>Internal quantum efficiencies (IQEs) as high as 69% were realized at room temperature from AlGaN/AlN quantum wells (QWs) emitting at 247 nm grown by metalorganic vapor phase epitaxy. The extremely high IQEs were achieved by examining the source–supply sequence. QWs fabricated by a continuous source–supply method have longer emission wavelengths (λ) and higher IQEs compared to QWs fabricated by modified migration enhanced epitaxy (MMEE). MMEE is an alternating source–supply method where the NH3 interruption promotes Ga evaporation. Thus, to obtain the same λ, MMEE requires a lower growth temperature than the continuous method, compromising the quality of the AlN and AlGaN layers as well as the IQE of QWs.</jats:p>

収録刊行物

被引用文献 (19)*注記

もっと見る

参考文献 (17)*注記

もっと見る

関連プロジェクト

もっと見る

詳細情報 詳細情報について

問題の指摘

ページトップへ